Mfr. #:
EPC2012
Description:
TRANS GAN 200V 3A BUMPED DIE
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Buy EPC2012

Documents

NAMETYPE
DatasheetsEPC2012
Mfg Application NotesSecond Generation eGaN® FETs
Assembling eGaN® FETs
Using eGaN® FETs
Product Training ModulesParalleling eGaN® FETs
Video FileEPC eGaN FETs -- Another Geek Moment | Hotenda
Featured ProductEPC Low Voltage eGaN® FETs
PCN Design/SpecificationEPC20xx Material 10/Apr/2013
PCN Assembly/OriginEPC2yyy Family Process Change 14/Dec/2013
PCN OtherMultiple Changes 24/Jun/2014
Online CatalogN-Channel Standard FETs

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerEPC
SerieseGaN®
PackagingTape & Reel (TR)
Part StatusActive
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C3A (Ta)
Rds On (Max) @ Id, Vgs100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) @ Vgs1.8nC @ 5V
Input Capacitance (Ciss) @ Vds145pF @ 100V
Power - Max-
Operating Temperature-40°C ~ 125°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

Resources

NAMETYPE
Standard Package1,000
Other Names917-1017-2
TagsEPC2012 EPC201 EPC20 EPC2 EPC

For Use With

Part NumberDescription
EPC9004EPC2012 eGaN® Series Power Management, Half H-Bridge Driver (External FET) Evaluation Board

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Package

Part NumberDescription
EPC2012TRANS GAN 200V 3A BUMPED DIE
EPC2012TRANS GAN 200V 3A BUMPED DIE

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  • Delivery date: usually 2 to 7 working days.
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