IPP072N10N3 G - Infineon Technologies

Documents

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	7.2 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 90µA
Gate Charge (Qg) @ Vgs	68nC @ 10V
Input Capacitance (Ciss) @ Vds	4910pF @ 50V
Power - Max	150W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3

Part Number	Description
IPP65R310CFD	MOSFET N-CH 650V 11.4A TO220

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