IPL60R210P6AUMA1 - Infineon Technologies

Mfr. #:
IPL60R210P6AUMA1
Description:
MOSFET N-CH 600V 4VSON
Payment
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Delivery
DHL / FedEx / Ups / TNT / EMS
 
Buy IPL60R210P6AUMA1

Attributes

NAMETYPE
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C19.2A (Tc)
Rds On (Max) @ Id, Vgs210 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id4.5V @ 630µA
Gate Charge (Qg) @ Vgs37nC @ 10V
Input Capacitance (Ciss) @ Vds1750pF @ 100V
Power - Max151W
Mounting TypeSurface Mount
Package / Case4-TSFN, Exposed Pad
Supplier Device PackagePG-VSON-4
TagsIPL60R2 IPL60 IPL6 IPL

Interested

Part NumberDescription
IPL60R180P6AUMA1MOSFET N-CH 600V 4VSON
IPL60R255P6AUMA1MOSFET N-CH 600V 4VSON
IPP60R190P6MOSFET N-CH 600V 20.2A TO220
PSMN017-30BL,118MOSFET N-CH 30V 32A D2PAK
STD6N95K5MOSFET N-CH 950V 9A DPAK

Package

Part NumberDescription
IPL60R210P6AUMA1MOSFET N-CH 600V 4VSON
IPL60R210P6AUMA1MOSFET N-CH 600V 4VSON

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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