FQI3N80TU - Fairchild Semiconductor

Mfr. #:
FQI3N80TU
Description:
MOSFET N-CH 800V 3A I2PAK
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Documents

NAMETYPE
DatasheetsFQB3N80, FQI3N80

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerFairchild Semiconductor
SeriesQFET®
PackagingTube
Part StatusObsolete
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Rds On (Max) @ Id, Vgs5 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) @ Vgs19nC @ 10V
Input Capacitance (Ciss) @ Vds690pF @ 25V
Power - Max3.13W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK

Resources

NAMETYPE
Standard Package50
TagsFQI3N FQI3 FQI

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