VS-GB200TS60NPBF - Vishay Semiconductor/Diodes Division

Mfr. #:
VS-GB200TS60NPBF
Description:
IGBT Module NPT Half Bridge 600V 209A 781W Chassis Mount INT-A-PAK
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Buy VS-GB200TS60NPBF

Documents

NAMETYPE
DatasheetsVS-GB200TS60NPbF

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - IGBTs - Modules
ManufacturerVishay Semiconductor Diodes Division
Series-
Part StatusActive
IGBT TypeNPT
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)209A
Power - Max781W
Vce(on) (Max) @ Vge, Ic2.84V @ 15V, 200A
Current - Collector Cutoff (Max)200µA
Input Capacitance (Cies) @ Vce-
InputStandard
NTC ThermistorNo
Mounting TypeChassis Mount
Package / CaseINT-A-PAK (3 + 4)
Supplier Device PackageINT-A-PAK

Resources

NAMETYPE
Standard Package15
Other NamesVSGB200TS60NPBF
TagsVS-GB200T VS-GB2 VS-GB VS-G

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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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