IRF1902GPBF - International Rectifier

Documents

NAME	TYPE
Product Training Modules	High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below
PCN Obsolescence/ EOL	Multiple Devices 25/Apr/2014

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Obsolete
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Rds On (Max) @ Id, Vgs	85 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	700mV @ 250µA
Gate Charge (Qg) @ Vgs	7.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds	310pF @ 15V
Power - Max	2.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

Part Number	Description
IRF1902GTRPBF	MOSFET N-CH 20V 4.2A 8SOIC

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