IPB027N10N5ATMA1 - Infineon Technologies

Documents

NAME	TYPE
Datasheets	IPB027N10N5 OptiMOS™ 5 80V and 100V Brief
Online Catalog	N-Channel Standard FETs

NAME	TYPE
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Rds On (Max) @ Id, Vgs	2.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 184µA
Gate Charge (Qg) @ Vgs	139nC @ 10V
Input Capacitance (Ciss) @ Vds	10300pF @ 50V
Power - Max	250W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3

Part Number	Description
IPB027N10N5ATMA1	MOSFET N-CH 100V 120A D2PAK-3
IPB027N10N5ATMA1	MOSFET N-CH 100V 120A D2PAK-3

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