TK9A90E,S4X - Toshiba Semiconductor & Storage

Mfr. #:
TK9A90E,S4X
Description:
MOSFET N-CH 900V TO220SIS
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Documents

NAMETYPE
DatasheetsTK9A90E
Online CatalogN-Channel Standard FETs

Attributes

NAMETYPE
CategoryDiscrete Semiconductor Products
FamilyTransistors - FETs, MOSFETs - Single
ManufacturerToshiba Semiconductor and Storage
Series-
PackagingTube
Part StatusActive
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Rds On (Max) @ Id, Vgs1.3 Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 900µA
Gate Charge (Qg) @ Vgs46nC @ 10V
Input Capacitance (Ciss) @ Vds2000pF @ 25V
Power - Max50W
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220SIS

Resources

NAMETYPE
Standard Package150
Other NamesTK9A90E,S4X(S
TK9A90ES4X
TagsTK9A TK9

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